Wide Band Gap (WBG) Semiconductors Can Operate At Higher Temperature, Voltage And Frequency, These Are Lightweight And Compact In Size

Wide Band Gap (Wbg) Semiconductor

Wide band gap semiconductor, also known as WBG semiconductor, is a new generation of semiconductors produced by combining silicon carbide (SiC) and gallium nitride (GaN) as the base material. They have a higher band gap, compared to silicon, which results in lower conduction losses. These materials are a critical component in the production of green and blue LEDs, lasers, and military radars.

The high band gap allows for lower electric losses and higher switching speeds. These qualities make them suitable for applications such as insulated gate bipolar transistors, which have become popular in power electronics.

According to Coherent Market Insights the Wide Band Gap (Wbg) Semiconductor Market Size, Share, Outlook, and Opportunity Analysis, 2022-2028

These devices are also used in motor drives, allowing for higher output currents and power density. This technology is a key component in the development of sustainable energy systems, as well as for electric and hybrid vehicles.

Wide Band Gap (Wbg) Semiconductor typically have a larger energy gap than silicon, which allows for thinner materials. This results in lower conduction and switching losses compared to silicon of equal voltage rating, making them ideal for use in high-power, high-frequency applications.

They also have extensive electron mobility and high saturation velocity, which enables them to switch at higher switching frequencies than silicon. GaN offers an electron mobility of 2,000 cm2/Vs, compared to SiC’s 650 cm2/Vs.

These materials are a major breakthrough in the field of optoelectronics and are expected to play an increasingly important role in future applications, such as spectroscopy and sensing. Their unique properties allow them to operate at much higher voltages, frequencies, and temperatures than conventional semiconductor materials.

A number of challenges exist in the development and manufacture of wide bandgap devices, including the need for efficient and accurate testing methods. These devices are subject to changes in junction temperature, changes in conductivity, and a number of other parameters.

Wide-band gap materials require a higher energy applied to conduct than conventional semiconductors, so their electrical resistance is higher than that of traditional devices. This means that wide-bandgap materials will need specialized cooling to prevent overheating and maintain performance.

Another major hurdle in the development of these technologies is their high breakdown field. In order to avoid overheating, a wide-bandgap material must be made as thin as possible, which is difficult to achieve using a conventional manufacturing process.

NXP Semiconductors have launched the S32G GoldVIP, a vehicle integration platform in February 2022, for addressing real-time and application development challenges.